advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 30v simple drive requirement r ds(on) 6m fast switching i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.4 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice ap85t03gh/j parameter rating rohs-compliant product drain-source voltage 30 gate-source voltage + 20 continuous drain current, v gs @ 10v 75 continuous drain current, v gs @ 10v 55 pulsed drain current 1 350 operating junction temperature range -55 to 175 linear derating factor 0.7 storage temperature range total power dissipation 107 -55 to 175 200810235 1 thermal data parameter the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap85t03gj) is available for low-profile applications. g d s to-251(j) g d s to-252(h) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 6 m ? ?
ap85t03gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 3 5 7 9 11 13 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 : 0 0.4 0.8 1.2 1.6 2 2.4 -50 25 100 175 t j ,junction temperature ( o c) v gs(th) (v) 0 50 100 150 200 250 300 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v 4.5v 10v 7.0v 6.0v 0 50 100 150 012345 v ds , drain-to-source voltage (v) i d , drain current (a) v g =4.0v 4.5v 10v 7.0v 6.0v t c = 175 o c 0.5 1.0 1.5 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c
ap85t03gh/j fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 100 1000 10000 1 6 11 16 21 26 31 v ds ,drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 14 0 10203040506070 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =24v i d =30a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 1 00 ms dc
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 85t03 gh ywwsss date code ( ywwsss ) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only e3 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 meet rohs requirement for low voltage mosfet only
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